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TDA7241B
20W BRIDGE AMPLIFIER FOR CAR RADIO
VERY LOW STAND-BY CURRENT GAIN = 32dB OUTPUT PROTECTED AGAINST SHORT CIRCUITS TO GROUND AND ACROSS LOAD COMPACT HEPTAWATT PACKAGE DUMP TRANSIENT THERMAL SHUTDOWN LOUDSPEAKER PROTECTION HIGH CURRENT CAPABILITY LOW DISTORTION / LOW NOISE DESCRIPTION The TDA7241B is a 20W bridge audio amplifier IC designed specially for car radio applications. Thanks to the low external part count and compact Heptawatt 7-pin power package the TDA7241B occupies little space on the printed circuit board. Reliable operation is guaranteed by a compreFigure 1: Test and Appliication Circuit
Heptawatt ORDERING NUMBER: TDA7241BH
hensive array of on-chip protection features. These include protection against AC and DC output short circuits (to ground and across the load), load dump transients, and junction overtemperature. Additionally, the TDA7241B protects the loudspeaker when one output is short-circuited to ground.
July 1997
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PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS
Symbol VS VS VS IO IO Ptot Tstg, Tj Operating Supply Voltage DC Supply Voltage Peak Supply Voltage (t = 50ms) Peak Output Current (non repetitive t = 0.1ms) Peak Output Current (repetitive f > 10Hz) Power Dissipation at Tcase = 85C Storage and Junction Temperature Parameter Value 18 28 40 4.5 3.5 16 -40 to 150 Unit V V V A A W C
THERMAL DATA
Symbol Rth j-case Description Thermal Resistance Junction-case Max Value 4 Unit C/W
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ELECTRICAL CHARACTERISTICS (Refer to the circuit of Fig. 1; VS = 14.4V; Rth (heatsink) = 4C/W, T amb = 25C, unless otherwise specified
Symbol VS Id VOS PO Parameter Supply Range Total Quiescent Current Output Offset Voltage Output Power . f = 1KHz d = 10% . R L = 2 RL = 4 R L = 8 18 26 20 12 0.1 0.05 31 40 R g = 10K f = 1KHz 32 50 2 3 65 100 f = 1KHz f = 1KHz PO = 2W PO = 15W PO = 15W VO = 2Vrms R L = 4 RL = 4 RL = 4 25 70 90 1 150 70 70 30 10 33 0.5 R L = 4 Test Condition Min. Typ. Max. 18 80 100 Unit V mA mV W % % dB dB V mV % A K mV Hz KHz dB V C
d
Distortion
f = 1KHz R L = 4 PO = 50mW to 12W R L = 8 PO = 50mW to 6W f = 1KHz
GV SVR En Isb Ri Vi fL fH AS VTH(pin.2) T sd
(*) B = Curve
Voltage Gain Supply Voltage Rejection Total Input Noise Efficiency Stand-by Current Input Resistance Input Sensitivity Low Frequency Roll Off (-3dB) High Frequency Roll Off (-3dB) Stand-by Attenuation Stand-by Threshold Thermal Shutdown Junction Temp.
(**) B = 22Hz to 22KHz
f = 1KHz f =100Hz Rg = 10K B = Curve A R L = 4 PO = 20W B = 22Hz to 22KHz RS = 10K
Figure 2: P.C. Board and Component Layout of the Circuit of Fig. 1 (1:1 scale).
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Figure 3: Output Power vs. Supply Voltage Figure 4: Output Power vs. Supply Voltage
Figure 5: Distortion vs. Output Power
Figure 6: Distortion vs. Output Power
Figure 7: Distortion vs. Output Power
Figure 8: SVR vs. Frequency
R g = 10k
R g = 0
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Figure 9: Power Dissipation and Efficiency vs. Output Power Figure 10: Power Dissipation and Efficiency vs. Output Power
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HEPTAWATT PACKAGE MECHANICAL DATA
DIM. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia MIN. mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 0.8 2.54 5.08 7.62 0.9 2.67 5.21 7.8 10.4 10.4 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 3.85 0.144 3 15.8 6.6 0.102 0.594 0.236 0.110 0.200 0.152 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.031 0.100 0.200 0.300 0.035 0.105 0.205 0.307 0.409 0.409 0.668 0.587 0.848 0.891 0.118 0.622 0.260
2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05
0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1997 SGS-THOMSON Microelectronics - All Rights Reserved HEPTAWATTTM is a Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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